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EVAL-ADXL359Z

LowNoise,LowDrift,LowPower3-AxisMEMSAccelerometer

GENERALDESCRIPTION ThedigitaloutputADXL3591isalownoisedensity,low0goffset drift,lowpower,3-axismicroelectromechanicalsystem(MEMS) accelerometerwithselectablemeasurementranges.TheADXL359 supportsthe±10g,±20g,and±40granges. TheADXL359offersindustryleadingn

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

EXB359

FUJIBASEDRIVEMODULE

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

F-359XP

POWERTRANSFORMERPCMountDualPrimary

TRIAD

TRIAD MAGNETICS

FDN359

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandbatte

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN359A

N-Channel30V(D-S)MOSFET

Features VDS(V)=27V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDN359A

N-Channel30V(D-S)MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingadvancedPowerTrenchprocessthathasbeen especiallytailoredtominimizeon-stateresistance andyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicatio

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN359AN

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandbatte

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN359AN

N-Channel30V(D-S)MOSFET

Features VDS(V)=27V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDN359AN

N-Channel30V(D-S)MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingadvancedPowerTrenchprocessthathasbeen especiallytailoredtominimizeon-stateresistance andyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicatio

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN359B

N-Channel30V(D-S)MOSFET

Features VDS(V)=30V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

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MACOM
2016+
TSSOP8
6528
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7500
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7750
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更多SW359A供應(yīng)商 更新時(shí)間2025-4-9 14:43:00