SW50N06T中文資料芯派科技數(shù)據(jù)手冊PDF規(guī)格書
SW50N06T規(guī)格書詳情
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
Features
■ High ruggedness
■ RDS(ON) (Max 16.8m?)@VGS=10V
■ Gate Charge (Typ 41nC)
■ Improved dv/dt Capability
■ 100 Avalanche Tested
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SIW |
22+ |
QFN |
12000 |
只做原裝、原廠優(yōu)勢渠道、假一賠十 |
詢價 | ||
SIW |
23+ |
NA/ |
5766 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
QUALCOMM |
22+ |
N/A |
2207 |
原裝原裝原裝 |
詢價 | ||
SILICON |
15+ |
QFN |
2576 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
SILICON LABS/芯科 |
22+ |
QFN |
34137 |
只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
WORKS |
24+ |
QFN |
35200 |
原裝現(xiàn)貨/放心購買 |
詢價 | ||
SIW |
22+ |
QFN |
6521 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
SIW |
21+ |
QFN |
2516 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
ADI |
22+ |
N/A |
60000 |
專注配單,只做原裝現(xiàn)貨 |
詢價 | ||
SILICON |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 |
