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T1G6003028-FSEVB1中文資料TriQuint數(shù)據(jù)手冊(cè)PDF規(guī)格書

T1G6003028-FSEVB1
廠商型號(hào)

T1G6003028-FSEVB1

功能描述

30W, 28V, DC ??6 GHz, GaN RF Power Transistor

文件大小

1.30527 Mbytes

頁(yè)面數(shù)量

13 頁(yè)

生產(chǎn)廠商 TriQuint Semiconductor
企業(yè)簡(jiǎn)稱

TriQuint

中文名稱

TriQuint Semiconductor官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-16 16:26:00

T1G6003028-FSEVB1規(guī)格書詳情

General Description

The TriQuint T1G6003028-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint’s proven 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Product Features

? Frequency: DC to 6 GHz

? Output Power (P3dB): 30 W at 6 GHz

? Linear Gain: >14 dB at 6 GHz

? Operating Voltage: 28 V

? Low thermal resistance package

Applications

? Military radar

? Civilian radar

? Professional and military radio communications

? Test instrumentation

? Wideband or narrowband amplifiers

? Jammers

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TE/泰科
2452+
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415341
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