T4312816B-6SG中文資料凱鈺科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

GRNERAL DESCRIPTION

The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

FEATURES

? Fast access time from clock: 5/5.4 ns

? Fast clock rate: 166/143 MHz

? Fully synchronous operation

? Internal pipelined architecture

? 2M word x 16-bit x 4-bank

? Programmable Mode registers

- CAS# Latency: 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: interleaved or linear burst

- Burst stop function

? Auto Refresh and Self Refresh

? 4096 refresh cycles/64ms

? CKE power down mode

? Single +3.3V power supply

? Interface: LVTTL

? 54-pin 400 mil plastic TSOP II package

? Lead-free package is available