| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|
BZW50-12 | | AXIALLEADEDTRANSIENTVOLTAGESUPPRESSORSDIODE | SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司 | SUNMATE |
BZW50-12 | | 5000WattsAxialLeadedTransientVoltageSuppressor | SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司 | SUNMATE |
BZW50-12 | | Transil??transientvoltagesurgesuppressor(TVS)
Description
Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedICs.
Features
■Peakpulsepower:5000W | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
BZW50-12 | | Transil,transientvoltagesurgesuppressor(TVS)
Description
Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedICs.
Features
■Peakpulsepower:5000W | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
BZW50-12 | | TRANSIENTVOLTAGESUPPRESSOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI |
BZW50-12 | | TRANSIENTVOLTAGESUPPRESSOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI |
BZW50-12B | | TRANSILTM
Description
Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedICs.
Features
■Peakpulsepower:5000W | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
BZW50-12B | | TRANSIENTVOLTAGESUPPRESSOR
Stand-offZenerVoltage:10-180Volts
PeakPower:5000Watts
FEATURES:
*5000W(10/1000μs)PeakPulsePower
*Excellentclampingcapability
*Lowincrementalsurgeresistance
*Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.)
*Pb/RoHSFree | EIC EIC discrete Semiconductors | EIC |
BZW50-12B | | Transil,transientvoltagesurgesuppressor(TVS)
Description
Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedICs.
Features
■Peakpulsepower:5000W | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
BZW50-12B | | Transil??transientvoltagesurgesuppressor(TVS)
Description
Transildiodesprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOSTechnologyandlowvoltagesuppliedICs.
Features
■Peakpulsepower:5000W | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |