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TA2609A

SAW Filter 869 MHz (BW 2MHz) SMD 3X3 mm

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

2609B

BroadbandPhotodiodeModule

The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiberopticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontrolofparasitic

EMCORE

Emcore Corporation

2609B

2609BBroadbandPhotodiodeModule

Description The2609Bisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetobettercontro

agere

Agere Systems

2609C

2609CBroadbandPhotodiodeModule

Description The2609Cisapackagedimpedance-matchedphotodiodemodulewithinternalgaindesignedforuseinopticalbroadbandreceiversinfiber-opticnetworks.Thepatentedimpedance-matchtechnologyresultsinimprovedgain-bandwidthproductcomparedtoexternalcircuitsduetocontrolofpa

agere

Agere Systems

AP2609GY-HF

SimpleDriveRequirement,SmallPackageOutline

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

AP2609GYT-HF

SimpleDriveRequirement,SmallSize&LowerProfile

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

CEC2609

DualEnhancementModeFieldEffectTransistor(NandPChannel)

20V,4.8A,RDS(ON)=38mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-3.0A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=145mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. S2

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEH2609

DualEnhancementModeFieldEffectTransistor

FEATURES ■20V,3.5A,RDS(ON)=60mΩ@VGS=4.5V. RDS(ON)=80mΩ@VGS=2.5V. ■-20V,-2.5A,RDS(ON)=100mΩ@VGS=-4.5V. RDS(ON)=145mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapa

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEH2609A

DualEnhancementModeFieldEffectTransistor(NandPChannel)

20V,4A,RDS(ON)=45mW@VGS=4.5V. FEATURES RDS(ON)=55mW@VGS=2.5V. -20V,-2.8A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FKN2609

P-Ch20VFastSwitchingMOSFETs

Description TheFKN2609isthehighcelldensitytrenched P-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKN2609meetstheRoHSandGreenProduct requirementwithfullfunctionreliabilityapproved.

FETEKFETek Technology Corp.

臺灣東沅東沅科技股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
TST
23+
35375
華南總代
 詢價
24+
N/A
70000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
TST
23+
SMD
56000
TST全系列在售,支持實(shí)單
 詢價
TST
23+
SMD
25000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
TAI-SAW
兩年內(nèi)
NA
3722
實(shí)單價格可談
 詢價
更多TA2609A供應(yīng)商 更新時間2025-4-11 9:18:00

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