零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
MouldedTypeStraightPlugs | HOSIDEN Hosiden Corporation | HOSIDEN | ||
26WBTLand2x13WSEpoweramplifiers | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
26WBTLand2x13WSEpoweramplifiers | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TransistorSiliconNPNEpitaxialType High-Speed,High-VoltageSwitchingApplications DC-DCConverterApplications ?HighDCcurrentgain:hFE=120to300(IC=0.1A) ?Lowcollector-emittersaturation:VCE(sat)=0.14V(max) ?High-speedswitching:tf=0.2μs(typ) | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
SpecificationofHighPowerIREmittingDiodeChip | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
24+ |
3000 |
自己現(xiàn)貨 |
詢價 | ||||
TOS |
05+ |
原廠原裝 |
7612 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
TOSHIBA |
24+ |
SOP30 |
7500 |
十年品牌!原裝現(xiàn)貨!!! |
詢價 | ||
TOSHIBA |
22+ |
SOP |
3000 |
原裝正品,支持實單 |
詢價 | ||
原廠 |
2024+ |
SOP |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
TOSHIBA |
2016+ |
TQFP |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
TOSHIBA |
23+ |
TQFP |
220 |
專營高頻管模塊,全新原裝! |
詢價 | ||
TOSHIBA/東芝 |
23+ |
QFP |
11200 |
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
NA |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | ||||
TOSHIBA |
23+ |
SSOP |
4500 |
全新原裝、誠信經營、公司現(xiàn)貨銷售! |
詢價 |
相關規(guī)格書
更多- TA8516F
- TA8529F
- TA8607F
- TA8615N
- TA8628N
- TA8637BP
- TA8662N
- TA8677N
- TA8695AF
- TA8710S
- TA8747N
- TA8759BN
- TA8776N
- TA8795BF
- TA8819F
- TA8825AN
- TA8851CN
- TA8862P
- TA8874Z
- TA8880CN
- TAA765A
- TAS1020BPFB
- TAS3002PFB
- TAS5110DAD
- TB1004AF
- TB1238AN
- TB2118F
- TB31202FN
- TB31216FN
- TB31221F
- TB31224CF
- TB31261AF
- TB62007F
- TB62201AF
- TB62706BF
- TB6515AP
- TBA120T
- TBA229-2
- TBA520
- TBA820M
- TBB200G
- TBB204G
- TBP18S030N
- TBP28L22N
- TC07VOA
相關庫存
更多- TA8517F
- TA8600N
- TA8611AN
- TA8628
- TA8637BF
- TA8659AN
- TA8667F
- TA8690AN
- TA8696F
- TA8720AN
- TA8754AF
- TA8772AN
- TA8779F
- TA8800N
- TA8823N
- TA8835F
- TA8859CP
- TA8863CF
- TA8879N
- TA8892AN
- TACT82303EPB
- TAS3001CPW
- TAS3004PFB
- TAS5112DFD
- TB1202F
- TB1240AN
- TB2125F
- TB31214FN
- TB31218FN
- TB31223F
- TB31224F
- TB31262F
- TB62200AF
- TB62705CF
- TB62726AF
- TBA120S
- TBA120U
- TBA2800
- TBA820
- TBA920
- TBB202G
- TBB206G
- TBP24S10N
- TBP28S42N
- TC1232COA