TB28F008S3-150中文資料英特爾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

INTRODUCTION

This datasheet contains 4-, 8-, and 16-Mbit 3 Volt FlashFile memory specifications. Section 1.0 provides a flash memory overview. Sections 2.0, 3.0, 4.0, and 5.0 describe the memory organization and functionality. Section 6.0 covers electrical specifications for commercial and extended temperature product offerings. Ordering information is provided in Section 7.0. Finally, the 3 Volt FlashFile memory family documentation also includes application notes and design tools which are referenced in Section 8.0.

Product Overview

The 3 Volt FlashFile memory family provides density upgrades with pinout compatibility for the 4- , 8-, and 16-Mbit densities. The 28F004S3, 28F008S3, and 28F016S3 are high-performance memories arranged as 512 Kbyte, 1 Mbyte, and 2 Mbyte of eight bits. This data is grouped in eight, sixteen, and thirty-two 64-Kbyte blocks which are individually erasable, lockable, and unlockable insystem. Figure 5 illustrates the memory organization.

■ SmartVoltage Technology

- 2.7 V (Read-Only) or 3.3 V VCC and 3.3 V or 12 V VPP

■ High-Performance

- 120 ns Read Access Time

■ Enhanced Data Protection Features

- Absolute Protection with VPP = GND

- Flexible Block Locking

- Block Write Lockout during Power Transitions

■ Enhanced Automated Suspend Options

- Program Suspend to Read

- Block Erase Suspend to Program

- Block Erase Suspend to Read

■ Industry-Standard Packaging

- 40-Lead TSOP, 44-Lead PSOP

■ High-Density 64-Kbyte Symmetrical Erase Block Architecture

- 4 Mbit: Eight Blocks

- 8 Mbit: Sixteen Blocks

- 16 Mbit: Thirty-Two Blocks

■ Extended Cycling Capability

- 100,000 Block Erase Cycles

■ Low Power Management

- Deep Power-Down Mode

- Automatic Power Savings Mode Decreases ICC in Static Mode

■ Automated Program and Block Erase

- Command User Interface

- Status Register

■ SRAM-Compatible Write Interface

■ ETOX? V Nonvolatile Flash Technology