TC51864FL-10中文資料東芝數(shù)據(jù)手冊PDF規(guī)格書

Description

The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits. The TC51864PL utilizes

a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The

TC51864PL operates from a single 5V power supply. Refreshing is supported by a refresh (RFSH) input which enables two types of

refreshing - auto refresh and self refresh. The TC51864PL features a static RAM-like interface with a write cycle in which the input

data is written into the memory cell at the rising edge of RW thus simplifying the microprocessor interface.

The TC51864PL is available in a 32-pin, 0.6 inch width plastic DIP, and a small outline plastic flat package.

Features

? Organization: 65,536 words x 8 bits

? Single 5V power supply

? Fast access time

CEA CE Access Time

OE Access Time

toEA

tac Cycle Time

Power Dissipation

Self Refresh Current

TC51864 Family

-10

100ns

40ns

160ns

330mW

-85

85ns

35ns

135ns

385mW

100μA

Auto refresh is supported by an internal refresh address

counter

Self refresh is supported by an internal timer

Inputs and outputs TTL compatible

Refresh: 256 refresh cycles/4ms

Package

TC51864PL: DIP32-P-600

- TC51864FL: SOP32-P-525