TC55B465P-12中文資料東芝數(shù)據(jù)手冊PDF規(guī)格書

Description

The TC55B465P/J is a 262,144 bit high speed BICMOS static random access memory organized as 65,536 words by 4 bits and

operated from a single 5V supply. Toshiba's BICMOS technology and advanced circuit design enable high speed operation.

The TC55B465P/J features low power dissipation when the device is deselected using chip enable (CE) and has an output

enable input (OE) for fast memory access.

The TC55B465P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and

outputs are TTL compatible.

The TC55B465P/J is available in a 300mil width, 28-pin DIP and SOJ suitable for high density surface assembly.

Features

Fast access time

- TC55B465P/J-10

- TC55B465P/J-12

? Low power dissipation

- Operation:

- TC55B465P/J-10

- TC55B465P/J-12

10ns (max.)

12ns (max.)

140mA (max.)

140mA (max.)

- Standby:

15mA (max.)

Single 5V power supply: 5V±10

? Fully static operation

? Inputs and outputs TTL compatible

Output buffer control: OE

Package:

- TC55B465P: DIP28-P-300B

- TC55B465J: SOJ28-P-300A