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FRK9150D

26A,-100V,0.125Ohm,RadHard,P-ChannelPowerMOSFETs

Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25M?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi

Intersil

Intersil Corporation

FRK9150H

26A,-100V,0.125Ohm,RadHard,P-ChannelPowerMOSFETs

Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25M?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi

Intersil

Intersil Corporation

FRK9150R

26A,-100V,0.125Ohm,RadHard,P-ChannelPowerMOSFETs

Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25M?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi

Intersil

Intersil Corporation

FSF9150D

22A,-100V,0.140Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSF9150R

22A,-100V,0.140Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSYA9150D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSYA9150R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

HDM9150

FrequencySynthesizer

SHOULDERShoulder

好達(dá)電子無錫市好達(dá)電子股份有限公司

HV9150

HighVoltageOutputHystereticModeStepUpDC/DCController

GeneralDescription TheHV9150isahighoutputvoltagehystereticmodestepupDC/DCcontrollerthathasbothabuilt-inchargepumpconverterandalinearregulatorforawiderangeofinputvoltage.Thechargepumpconvertermodeisidealforbatterypoweredapplications.Theinternalconverte

SUTEX

Supertex, Inc

IRF9150

-25A,-100V,0.150Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號:

    TC9150P

  • 制造商:

    TOSHIBA

  • 制造商全稱:

    Toshiba Semiconductor

  • 功能描述:

    For Infrared Ray Remote Control Receiver

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
東芝
24+
DIP/SOP
30000
東芝產(chǎn)品線200條型號頂級渠道
詢價(jià)
TOSHIBA
24+
DIP
2500
自己現(xiàn)貨
詢價(jià)
TOSHIBA
23+
DIP
9526
詢價(jià)
TOSHIBA
11+
DIP-24
8000
全新原裝,絕對正品現(xiàn)貨供應(yīng)
詢價(jià)
TOSHIBA
24+
DIP
4897
絕對原裝!現(xiàn)貨熱賣!
詢價(jià)
TOS
2020+
DIP
129
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
TOSHIBA
05+
原廠原裝
4551
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
TOSHIBA
24+
PDIP-24
6232
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
詢價(jià)
TOSHIBA
23+
QFP-144
5000
原裝正品,假一罰十
詢價(jià)
東芝
24+
DIP
5000
只做原裝公司現(xiàn)貨
詢價(jià)
更多TC9150P供應(yīng)商 更新時(shí)間2025-4-26 8:00:00