TCET111.G中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The TCET111., TCET111.G consists of a phototransistor

optically coupled to a gallium arsenide infrared-emitting

diode in a 4 pin plastic dual inline package.

FEATURES

? CTR offered in 9 groups

? Isolation materials according to UL 94 V-0

? Pollution degree 2

(DIN / VDE 0110 / resp. IEC 60664)

? Climatic classification 55 / 100 / 21

(IEC 60068 part 1)

? Special construction: therefore, extra low coupling

capacity of typical 0.2 pF, high common mode rejection

? Low temperature coefficient of CTR

? Temperature range -40 °C to +110 °C

? Rated impulse voltage (transient overvoltage)

VIOTM = 6 kVpeak

? Isolation test voltage (partial discharge test voltage)

Vpd = 1.6 kV

? Rated isolation voltage (RMS includes DC)

VIOWM = 600 VRMS

? Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak

? Creepage current resistance according to VDE 0303/

IEC 60112 comparative tracking index: CTI ? 175

? Thickness through insulation ? 4 mm

? External creepage distance > 8 mm

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912