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AOZ8208

Eight-lineTVSDiodeArray

GeneralDescription TheAOZ8208isatransientvoltagesuppressordiodearraydesignedtoprotectdatalinesfromhightransientconditionsandESD.Thisstate-of-the-artdeviceutilizesAOSleadingedgeTrenchVerticalStructure[TVS]2?technologyforsuperiorclampingperformance. Thisdevice

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

API8208

VERSATILE20SECINSTANTVOICEROM

GENERALDESCRIPTION API8208Aisahighqualityvoicesynthesizercapableofvaryingplaybackduration.AproprietaryADPCMalgorithmisused.Theaudiomessageisstoredina512Kbitson-chipEPROMwhichcanstoreupto20secondsofvoicedataat6KHzsamplerate. FEATURES ?Develop

APLUS

Aplus Intergrated Circuits

API8208A

VERSATILE20SECINSTANTVOICEROM

GENERALDESCRIPTION API8208Aisahighqualityvoicesynthesizercapableofvaryingplaybackduration.AproprietaryADPCMalgorithmisused.Theaudiomessageisstoredina512Kbitson-chipEPROMwhichcanstoreupto20secondsofvoicedataat6KHzsamplerate. FEATURES ?Develop

APLUS

Aplus Intergrated Circuits

API8208G

OTPVOICESERIES

Features: ●2.4~5.5Vsinglepowersupplyoperation ●5bitASPCMCoding ●20secondvoicelengthat6KHZ ●Combinationofvoicebuildingblocks ●8sectionsMax. ●Supportvoicerecordedandmelody(midiformat)

APLUS

Aplus Intergrated Circuits

APL8208

VERSATILE20SECINSTANTVOICEROM

ETCList of Unclassifed Manufacturers

未分類制造商

APL8208A

VERSATILE20SECINSTANTVOICEROM

ETCList of Unclassifed Manufacturers

未分類制造商

BY8208

Ultrafasthigh-voltagesoft-recoverycontrolledavalancherectifiers

DESCRIPTION Plasticpackage,usingglasspassivationandahightemperaturealloyedconstruction. Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. Thepackageshouldbeusedinaninsulatingmediumsuchasresin,oilorSF6gas.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

CEG8208

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,6.5A,RDS(ON)=22mΩ@VGS=4.5V. RDS(ON)=32mΩ@VGS=2.5V. ■SuperHighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TSSOP-8forSurfaceMountPackage. ■ESDProtected:HB

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEG8208

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,6.5A,RDS(ON)=22mW@VGS=4.5V. RDS(ON)=32mW@VGS=2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TSSOP-8forSurfaceMountPackage. Leadfreeproductisacquired. ESDProtected:HBM2000V

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM8208

DualN-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號：

    TD8208

  • 功能描述：

    Hi g h Efficienc y 1.5MHz, Ste p Up Reg ulato r

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2455
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12588
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