TE28F800C3中文資料英特爾數(shù)據(jù)手冊PDF規(guī)格書

Device Description

This section provides an overview of the Intel? Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture.

Product Overview

The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit data bus. Individually-erasable memory blocks are optimally sized for code and data storage. Eight 4 Kword parameter blocks are located in the boot block at either the top or bottom of the device’s memory map. The rest of the memory array is grouped into 32 Kword main blocks.

Product Features

■ Flexible SmartVoltage Technology

—2.7 V– 3.6 V Read/Program/Erase

—12 V for Fast Production Programming

■ 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option

—Reduces Overall System Power

■ High Performance

—2.7 V– 3.6 V: 70 ns Max Access Time

■ Optimized Architecture for Code Plus Data Storage

—Eight 4 Kword Blocks, Top or Bottom Parameter Boot

—Up to One Hundred-Twenty-Seven 32 Kword Blocks

—Fast Program Suspend Capability

—Fast Erase Suspend Capability

■ Flexible Block Locking

—Lock/Unlock Any Block

—Full Protection on Power-Up

—WP# Pin for Hardware Block Protection

■ Low Power Consumption

—9 mA Typical Read

—7 A Typical Standby with Automatic Power Savings Feature (APS)

■ Extended Temperature Operation

—–40 °C to +85 °C

■ 128-bit Protection Register

—64 bit Unique Device Identifier

—64 bit User Programmable OTP Cells

■ Extended Cycling Capability

—Minimum 100,000 Block Erase Cycles

■ Software

—Intel? Flash Data Integrator (FDI)

—Supports Top or Bottom Boot Storage, Streaming Data (e.g., voice)

—Intel Basic Command Set

—Common Flash Interface (CFI)

■ Standard Surface Mount Packaging

—48-Ball μBGA*/VFBGA

—64-Ball Easy BGA Packages

—48-Lead TSOP Package

■ ETOX? VIII (0.13 μm) Flash Technology

—16, 32 Mbit

■ ETOX? VII (0.18 μm) Flash Technology

—16, 32, 64 Mbit

■ ETOX? VI (0.25 μm) Flash Technology

—8, 16 and 32 Mbit