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ITK13A65D

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(on)=0.4?(typ.) ?Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ITK13A65U

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(ON)=0.32?(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) ?Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobu

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

K13A65U

FieldEffectTransistorSiliconNChannelMOSType(DTMOS??

SwitchingRegulatorApplications ?Lowdrain-sourceONresistance:RDS(ON)=0.32?(typ.) ?Highforwardtransferadmittance:?Yfs?=8.0S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) ?Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK13A65D

SwitchingVoltageRegulators

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.4?(typ.) (2)Highforwardtransferadmittance:|Yfs|=7.5S(typ.) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=650V) (4)Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA) Applications ?SwitchingVoltageRegulato

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK13A65D

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(on)=0.4?(typ.) ?Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

TK13A65D

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

TK13A65U

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

TK13A65U

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK13A65U

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(ON)=0.32?(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) ?Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobu

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

TK13A65U

FieldEffectTransistorSiliconNChannelMOSType(DTMOS??

SwitchingRegulatorApplications ?Lowdrain-sourceONresistance:RDS(ON)=0.32?(typ.) ?Highforwardtransferadmittance:?Yfs?=8.0S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) ?Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

詳細參數(shù)

  • 型號：

    TK13A65U(Q)

  • 功能描述：

    MOSFET N-Ch MOS 13A 650V 40W 950pF 0.38

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
TOSHIBA
11+
239
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
TOSHIBA
24+
TO-220F
10000
原廠/代理渠道價格優(yōu)勢
 詢價
TOSHIBA/東芝
1948+
18562
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
TOSHIBA/東芝
24+
TO-220SIS
36500
一級代理/放心采購
 詢價
TOSHIBA/東芝
2021+
TO-220F
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
TOSHIBA/東芝
21+
TO220F
30000
原裝現(xiàn)貨假一賠十
 詢價
TOSHIBA/東芝
23+
TO220F
10000
公司只做原裝正品
 詢價
TOSHIBA/東芝
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
TOSHIBA
22+
TO-220
8900
英瑞芯只做原裝正品!!!
 詢價
TOSHIBA/東芝
22+
TO-220SIS
50000
只做正品原裝,假一罰十,歡迎咨詢
 詢價
更多TK13A65U(Q)供應商 更新時間2025-2-11 17:06:00

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