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P4SMAJ7.0C

Marking:TL;Package:SMA;400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

GlassPassivatedDieConstruction 400WPeakPulsePowerDissipation 5.0V–440VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

PZU14DB2

Marking:TL;Package:SOT353;Dual Zener diodes

1.1Generaldescription Dualisolatedgeneral-purposeZenerdiodesinSOT353(SC-88A)verysmall Surface-MountedDevice(SMD)standardplasticanddark-greenplasticpackages. 1.2Features 1.3Applications nGeneralregulationfunctions nNon-repetitivepeakreversepower dissipation:PZSM

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

R6012ANJ

Marking:TL;Package:LPTS;10V Drive Nch MOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy Applications Switching Structure SiliconN-channelMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

R6015ANJ

Marking:TL;Package:LPTS;10V Drive Nch MOSFET

Structure SiliconN-channelMOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Applications Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

R6018ANJ

Marking:TL;Package:LPTS;10V Drive Nch MOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RK3055E

Marking:TL;Package:CPT3;Small switching (60V, 8A)

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Low-voltagedrive. 5)Easilydesigneddrivecircuits. 6)Easytouseinparallel. Structure SiliconN-channelMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RRR030P03

Marking:TL;Package:TSMT3;4V Drive Pch MOSFET

■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RSD140P06

Marking:TL;Package:SOT-428;4V Drive Pch MOSFET

●Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Drivecircuitscanbesimple. 4)Paralleluseiseasy. ●Application Switching ●Structure SiliconP-channelMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RTR025N03

Marking:TL;Package:TSMT3;2.5V Drive Nch MOS FET

Features 1)LowOn-resistance. 2)Spacesaving?smallsurfacemountpackage(TSMT3). 3)Lowvoltagedrive(2.5Vdrive). Applications Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RUR020N02

Marking:TL;Package:TSMT3;1.5V Drive Nch MOSFET

■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    TL

  • 制造商:

    LINDSTROM

  • 功能描述:

    TWEEZERS FLAT EDGE STRONG TIPS

  • 功能描述:

    TWEEZERS, FLAT EDGE STRONG TIPS

  • 功能描述:

    TWEEZERS, FLAT EDGE STRONG TIPS; Tweezer

  • Type:

    Flat; Overall

  • Length:

    120mm; Tweezer Body

  • Material:

    Stainless Steel; Tweezer Tip

  • Material:

    Stainless Steel;

  • SVHC:

    No SVHC(19-Dec-2012) ;RoHS

  • Compliant:

    NA

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更多TL供應(yīng)商 更新時(shí)間2025-4-8 8:30:00