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FDB12N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDB12N50TM

N-ChannelMOSFET500V,11.5A,0.65廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?RDS(on)=0.55Ω(Typ.)@VGS=10V,ID=6A ?Lowgatecharge(Typ.22nC) ?LowCrss(Typ.12pF) ?Fastswitching ?100avalan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB12N50TM

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB12N50TM

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDB12N50U

N-ChannelMOSFET,FRFET500V,10A,0.8廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDB12N50U

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDI12N50

N-ChannelMOSFET500V,11.5A,0.65廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?RDS(on)=0.55Ω(Typ.)@VGS=10V,ID=6A ?Lowgatecharge(Typ.22nC) ?LowCrss(Typ.12pF) ?Fastswitching ?100avalan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDI12N50TU

N-ChannelMOSFET500V,11.5A,0.65廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?RDS(on)=0.55Ω(Typ.)@VGS=10V,ID=6A ?Lowgatecharge(Typ.22nC) ?LowCrss(Typ.12pF) ?Fastswitching ?100avalan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP12N50

N-ChannelMOSFET500V,11.5A,0.65廓

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP12N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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GUOXINMICRO
21+
TO-220F
4580
只做原裝正品假一賠十!正規(guī)渠道訂貨!
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GUOXINMICRO
19+
TO-220F
1000
進(jìn)口原裝現(xiàn)貨假一賠萬力挺實(shí)單
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GUOXINMICRO
25+
TO-220F
880000
明嘉萊只做原裝正品現(xiàn)貨
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紫光微
23+
TO-220F
24190
原裝正品代理渠道價格優(yōu)勢
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無錫紫光微
2447
TO-220F
105000
50個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
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紫光微
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
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紫光微
23+
TO-220F
50000
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無錫紫光微
23+
TO-220F
22820
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無錫紫光微
1634+
TO220F
15
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23+
NA/
3270
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更多TMA12N50HF供應(yīng)商 更新時間2025-4-2 18:14:00

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