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FQU3N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.0A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQU3N40TU

I-PAKTubePackingConfiguration

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FTK3N40D

400VN-ChannelMOSFETs

FS

First Silicon Co., Ltd

FTK3N40I

400VN-ChannelMOSFETs

FS

First Silicon Co., Ltd

FTK3N40S

400VN-ChannelMOSFETs

FS

First Silicon Co., Ltd

HM3N40PR

SiliconN-ChannelPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HM3N40R

SiliconN-ChannelPowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

KF3N40D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=400V,ID=2.2A ?D

KECKEC CORPORATION

KEC株式會社

KF3N40D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=400V,ID=2.2A ?D

KECKEC CORPORATION

KEC株式會社

KF3N40D

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

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TRINO
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24+
NA/
42050
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TRINO
20+
TO-251
38800
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TRINO
21+
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TRINO
23+
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50000
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TRINO
24+
TO-251
60000
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TRINNOTECH
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11200
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更多TMU3N40Z供應商 更新時間2025-4-25 9:26:00