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BF908

Dual-gateMOS-FETs

DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES ?Highforwardtransferadmittance ?Shortch

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF908

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF908R

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF908R

Dual-gateMOS-FETs

DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES ?Highforwardtransferadmittance ?Shortch

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF908R

Dual-gateMOS-FETs

DESCRIPTION Depletiontypefield-effecttransistorinaplasticmicrominiatureSOT143orSOT143Rpackage.Thetransistorsareprotectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES ?Highforwardtransferadmittance ?Shortch

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF908WR

N-channeldual-gateMOS-FET

DESCRIPTION DepletiontypefieldeffecttransistorinaplasticmicrominiatureSOT343Rpackage.Thetransistoris protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. FEATURES ?Highforwardtransferadmittance ?Shortchanne

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF908WR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BU908

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BU908

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

BU908

BU908

MICRO-ELECTRONICS

Micro Electronics

詳細(xì)參數(shù)

  • 型號：

    TND908

  • 功能描述：

    DIODE ARRAYS

供應(yīng)商型號品牌批號封裝庫存備注價格
ALLEGRO
2020+
DIP
254
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ALLEGRO
06+
原廠原裝
4457
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
ALLEGRO
24+
DIP
3000
原裝現(xiàn)貨,可開13%稅票
 詢價
ALLEGRO
22+
DIP
5000
原裝現(xiàn)貨庫存.價格優(yōu)勢
 詢價
ALLEGRO
24+
DIP
2685
原裝優(yōu)勢!自家現(xiàn)貨供應(yīng)!歡迎來電!
 詢價
ALLEGRO
23+
DIP
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
ALLEGRO
24+
35200
一級代理/放心采購
 詢價
ALLEGRO
23+
DIP16
3000
原裝正品假一罰百!可開增票!
 詢價
ALLEGRO
22+
DIP16
3000
原裝正品,支持實單
 詢價
ALLEGRO
2023+
DIP16
5800
進口原裝,現(xiàn)貨熱賣
 詢價
更多TND908供應(yīng)商 更新時間2025-4-9 17:39:00

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