首頁 >TNETD5200GHK>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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N-ChannelMOSFET FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=52mΩ(Max)@VGS=10V APPLICATIONS ·SwitchingVoltageRegulators ·DC-DCconverter | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MOSFETsSiliconN-channelMOS Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=44mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5 | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=44mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5 | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
SPDTSwitchforSingle-bandandDual-band,802.11a/b/gSystems GeneralDescription TheTQS5200isahighpower,single-poledouble-throwswitchconfiguredforTX-RXorAntennaDiversityswitchingapplicationsfortheWLANmarket.Thedeviceexhibitsindustry-leadinginsertionloss,isolationandpowerhandling. ProductFeatures ?IntegratedSPDTSwitchfor | TriQuint TriQuint Semiconductor | TriQuint | ||
802.11a/b/gSingle/Dual-bandSPDTSwitch | TriQuint TriQuint Semiconductor | TriQuint | ||
802.11a/b/gSingle/Dual-bandSPDTSwitch | TriQuint TriQuint Semiconductor | TriQuint | ||
HighSpeedIREmittingDiodein?5mm(T–13/4)Package DESCRIPTION TSFF5210isaninfrared,870nmemittingdiodeinGaAlAsdoublehetero(DH)technologywithhighradiantpowerandhighspeed,moldedinaclear,untintedplasticpackage. FEATURES ?Packagetype:leaded ?Packageform:T-13/4 ?Dimensions(inmm):?5 ?Leadswithstand-off ? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs DESCRIPTION TheTSHA520.seriesareinfrared,875nmemittingdiodesin GaAlAstechnology,moldedinaclear,untintedplastic package. FEATURES ?Packagetype:leaded ?Packageform:T-1? ?Dimensions(inmm):?5 ?Leadswithstand-off ?Peakwavelength:λp=875nm ?Highreliabilit | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
InfraredEmittingDiode Description TheTSHA520.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Features | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
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