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TP65H300G4LSGB-TR中文資料TRANSPHORM數(shù)據(jù)手冊(cè)PDF規(guī)格書

TP65H300G4LSGB-TR
廠商型號(hào)

TP65H300G4LSGB-TR

功能描述

650V SuperGaN? GaN FET in PQFN (source tab)

文件大小

1.08809 Mbytes

頁面數(shù)量

12

生產(chǎn)廠商 Transphorm
企業(yè)簡(jiǎn)稱

TRANSPHORM

中文名稱

Transphorm官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-6 10:12:00

人工找貨

TP65H300G4LSGB-TR價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

TP65H300G4LSGB-TR規(guī)格書詳情

Description

The TP65H300G4LSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

The Gen IV SuperGaN? platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Features

? Gen IV technology

? JEDEC-qualified GaN technology

? Dynamic RDS(on)eff production tested

? Robust design, defined by

— Wide gate safety margin

— Transient over-voltage capability

? Very low QRR

? Reduced crossover loss

? RoHS compliant and Halogen-free packaging

Applications

? Consumer

? Power adapters

? Low power SMPS

? Lighting

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
TOPRO
17PB
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12
普通
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3685
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23+
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1822+
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只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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02+
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TOPRO
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2789
全新原裝自家現(xiàn)貨!價(jià)格優(yōu)勢(shì)!
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