TPM2003-SO3R中文資料思瑞浦?jǐn)?shù)據(jù)手冊PDF規(guī)格書

Features

? 7-channel Darlington Array

? 500-mA Rated Drain Current (Per Channel)

? Very Low Output Leakage < 10 nA Per Channel

? Power Efficient with Low RDS-on

? Extended Temperature Range: TA = –40°C to 125°C

? High-Voltage Outputs: 40 V

? Compatible with 1.8-V to 5.0-V Logic Interface

? Integrated Free-wheeling Diodes for Inductive Load

? Improved Noise-immunity with integrated RC filter

? Enhanced ESD Protection Exceeds JESD 22 – 2.5-kV

HBM, 1.5-kV CDM

? Available in SOP16 and TSSOP16 Packages

Applications

? Inductive Loads

– Relays

– Unipolar Stepper & Brushed DC Motors

– Solenoids & Valves

? LED Indicators

? Logic Level Shifting

? Gate & IGBT Drive

Description

The TPM2003 is a high-voltage, high-current NMOS

transistor array. This device consists of seven channels of

low-side NMOS transistors with high-voltage outputs and

free-wheeling diodes for inductive loads.

The maximum drain-current rating of a single NMOS

channel is 500 mA. The device supports a wide I/O voltage

range from 1.8 V to 30 V. The transistors can drive

in parallel for higher current capability. Enhanced ESD

performance enhances system-level reliability.

The TPM2003 can replace traditional Bipolar Darlington

arrays with better thermal efficiency and reliability.