TPM2015QFC1R-S中文資料思瑞浦數(shù)據(jù)手冊PDF規(guī)格書

Features

? AEC-Q100 Grade-1 Qualified (TPM2015Q Only)

? 5-V Single Supply with Optimized Output Damping for

Gan Reliability

? 7-A Peak Source and 5-A Sink-Drive Current

? 0.69-ns Minimum Input Pulse Width (Typical)

? Low Propagation Delay (2-ns Typical)

? Optimized Pinout for Nanosecond-pulse-width

? Fast Rise and Fall Times (0.45-ns and 0.45-ns Typical)

? ESD Protection Exceeds JESD 22 – 6-kV HBM, 1.5-kV

CDM

? Available in Flip-Chip QFN2X2-10 Package

Applications

? Laser Distance Measuring System

? Automotive Lidar

? Driver Monitoring System

? GaN DC/DC Conversion System

Description

The TPM2015Q family of products are low-side singlechannel ultra-highspeed gate drivers for GaN and logiclevel MOSFETs. It is optimized for high-speed applications

such as Lidar and high-density power convertors with

enhanced low propagation delay design. The 2-mm×2-mm

flip-chip QFN package of the TPM2015 minimizes parasitic

inductance in the gate driver power loop and achieves

state-of-the-art narrow pulse width as short as 0.69 ns.

Transient suppressors ensure reliable operation with ultrafast high-current output pulses.