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TPS7H1111HBL/EM

TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H1111HBL/EM

TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)Characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H1111HBL/EM

Marking：TPS7H1111HBL；Package：CFP；TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H1111HBL/EM

Marking：TPS7H1111HBL；Package：CFP；TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H1111HBLSLASHEM

TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator

1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)Characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H1111HBLSLASHEM

TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator

1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H1111HBLSLASHEM

TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator

1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H1111HBLSLASHEM

TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator

1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H1111MPWPT

TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator

1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)Characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TPS7H1111MPWPTSEP

TPS7H1111-SPandTPS7H1111-SEP1.5-A,Ultra-LowNoise,HighPSRRRadiationHardenedLowDropout(LDO)LinearRegulator

1Features ?Totalionizingdose(TID)characterized –Radiationhardnessassurance(RHA) availabilityof100krad(Si)or50krad(Si) ?Single-EventEffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immuneuptolinear

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TI(德州儀器)
2024+
N/A
500000
誠(chéng)信服務(wù),絕對(duì)原裝原盤(pán)
 詢(xún)價(jià)
3000
原裝現(xiàn)貨
 詢(xún)價(jià)
TI德州儀器
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢(xún)價(jià)
TI/德州
2018+
SOIC
32500
VSSOP
 詢(xún)價(jià)
N/A
99
詢(xún)價(jià)
TI
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂(yōu)
 詢(xún)價(jià)
TI/德州儀器
23+
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
 詢(xún)價(jià)
TI
16+
原廠封裝
30
宇航IC只做原裝假一罰十
 詢(xún)價(jià)
TI
24+
N/A
90000
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價(jià)格合理
 詢(xún)價(jià)
TI
24+
30
全新原裝
 詢(xún)價(jià)
更多TPS7H1111HBL/EM供應(yīng)商 更新時(shí)間2025-5-23 18:30:00

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