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20N65

20A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC20N65isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCUnisonic Technologies

友順友順科技股份有限公司

20N65

20AN-ChannelPowerMOSFET

Features ●RDS(ON)=0.35Ω ●Ultralowgatecharge(Typical150nC) ●Lowreversetransfercapacitance(CRSS=typical36pF) ●Fastswitchingcapability ●Avalancheenergyspecified ●Improveddv/dtcapability,highruggedness Application ●Powerfactorcorrection（PFC） ●Switchedm

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

20N65A

20A650VN-channelenhancementmodefieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

20N65Y

20Amps,650VoltsN-CHANNELMOSFET

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

AM20N65

MOSFET650V,20AN-CHANNEL

FEATURE ?ProprietaryNewPlanarTechnology ?RDS(ON),typ.typ.=0.38?@VGS=10V ?LowGateChargeMinimizeSwitchingLoss ?FastRecoveryBodyDiode DESCRIPTION TheAM20N65isavailableinTO220andTO220F Packages. APPLICATIONS ?Adaptor ?TVMainPower ?SMPSPowerSupply ?LCDPanel

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

CEB20N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB20N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB20N65SF

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. Fastreverserecoverytime. Drivecircuitscanbesimple.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CECS20N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,19A,RDS(ON)=180mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CECS20N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,19A,RDS(ON)=180mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Truesemi(信安)
2447
TO-220F
105000
50個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
 詢價(jià)
TRUESEMI/信安
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
TH/韓國(guó)太虹
2048+
TO-220F
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
TRUESEMI信安
23+
TO-220F
22820
原裝正品，支持實(shí)單
 詢價(jià)
TRUESEMI
21+
TO-220F
7034
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
24+
N/A
74000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
Truesemi(信安)
23+
TO-220F-3
553
三極管/MOS管/晶體管 > 場(chǎng)效應(yīng)管(MOSFET)
 詢價(jià)
T
TO-220F
22+
6000
十年配單,只做原裝
 詢價(jià)
TRUESEMI/信安
23+
NA/
3884
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
 詢價(jià)
TURESEMI
2022+
TO-220F
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
更多TSF20N65MR供應(yīng)商 更新時(shí)間2025-3-20 15:00:00

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