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MDF1723TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=85A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

UP1723

2A,18V,High-EfficiencySynchronous-RectifiedBuckConverter

UPI

uPI Semiconductor Corp

UP1723PRUA

2A,18V,High-EfficiencySynchronous-RectifiedBuckConverter

UPI

uPI Semiconductor Corp

UPA1723

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION TheμPA1723isN-ChannelMOSFieldEffectTransistordesignedforpowermanagementswitch. FEATURES ?Lowon-stateresistance RDS(on)1=6.7m?MAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4m?MAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7m?MAX.(VGS=2.5V,ID=7.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA1723

MOSFIELDEFFECTTRANSISTOR

FEATURES ?Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4mΩMAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7mΩMAX.(VGS=2.5V,ID=7.0A) ?LowCiss:Ciss=3800pFTYP. ?Built-inG-Sprotectiondiode ?Smallandsurfacemountpackage(PowerSOP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA1723G

MOSFIELDEFFECTTRANSISTOR

FEATURES ?Lowon-stateresistance RDS(on)1=6.7mΩMAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4mΩMAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7mΩMAX.(VGS=2.5V,ID=7.0A) ?LowCiss:Ciss=3800pFTYP. ?Built-inG-Sprotectiondiode ?Smallandsurfacemountpackage(PowerSOP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA1723G

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION TheμPA1723isN-ChannelMOSFieldEffectTransistordesignedforpowermanagementswitch. FEATURES ?Lowon-stateresistance RDS(on)1=6.7m?MAX.(VGS=4.5V,ID=7.0A) RDS(on)2=7.4m?MAX.(VGS=4.0V,ID=7.0A) RDS(on)3=8.7m?MAX.(VGS=2.5V,ID=7.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

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3450
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23+
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41282
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9350
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60000
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50000
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更多TZ1723A供應商 更新時間2025-4-27 9:18:00

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