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UCC27311ADRCR中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

UCC27311ADRCR
廠商型號(hào)

UCC27311ADRCR

功能描述

UCC27311A 120V, 3.7A/4.5A Half-Bridge Driver with 8V UVLO and Enable

絲印標(biāo)識(shí)

27311A

封裝外殼

VSON

文件大小

1.96373 Mbytes

頁(yè)面數(shù)量

37 頁(yè)

生產(chǎn)廠商 Texas Instruments
企業(yè)簡(jiǎn)稱(chēng)

TI德州儀器

中文名稱(chēng)

美國(guó)德州儀器公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-5-5 23:00:00

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UCC27311ADRCR規(guī)格書(shū)詳情

1 Features

? Drives two N-channel MOSFETs in half-bridge

configuration

? –40°C to +150°C junction temperature range

? 120V abs max voltage on HB pin

? 3.7A sink, 4.5A source output currents

? 8V to 17V VDD operating range (20V abs max)

with UVLO

? –(28–VDD)V abs max negative transient tolerance

on HS pin (<100ns pulse)

? –10V to +20V abs max input pins tolerance,

independent of supply voltage range (TTL

compatible)

? Switching parameters:

– 20ns typical propagation delay times

– 7.2ns rise and 5.5ns fall time with 1000pF load

– 4ns typical delay matching

? Integrated bootstrap diode

? Enable/disable functionality with low current

consumption (3μA typical) when disabled

2 Applications

? Solar power optimizers and micro inverters

? Telecom and merchant power supplies

? Online and offline UPS

? Energy storage systems

? Battery test equipment

3 Description

The UCC27311A is a robust gate driver designed

to drive two N-channel MOSFETs in a half-bridge

or synchronous buck configuration with an absolute

maximum bootstrap voltage of 120V. Its 3.7A peak

source and 4.5A peak sink current capability allows

the UCC27311A to drive large power MOSFETs

with minimized switching losses during the transition

through the Miller Plateau. The switching node

(HS pin) can handle negative transient voltage,

which allows the high-side channel to be protected

from inherent negative voltages caused by parasitic

inductance and stray capacitance.

The inputs are independent of supply voltage and are

able to withstand -10V and +20V absolute maximum

ratings. The low-side and high-side gate drivers are

matched to 4ns between the turn on and turn off of

each other and are controlled throught the LI and

HI input pins respectively. An on-chip 120V rated

bootstrap diode eliminates the need to add discrete

bootstrap diodes. Undervoltage lockout (UVLO) is

provided for both the high-side and the low-side

drivers which provides symmetric turn on and turn

off behavior and forces the outputs low if the drive

voltage is below the specified threshold.

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