UCC57102ZQDRQ1中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書

1 Features

? Qualified for automotive applications

? AEC-Q100 qualified

– Device temperature grade 1

? Typical 3A sink 3A source output currents

? DESAT protection with programmable delay

? Soft turn-off when fault happens

? Absolute maximum VDD voltage: 30V

? Input and enable pins capable of withstanding up

to –5V

? Tight UVLO thresholds for bias flexibility

? Typical 26ns propagation delay

? Self-protect driver with thermal shutdown function

? Wide bias voltage range

? Available in 5mm × 4mm SOIC-8 package

? Operating junction temperature range of –40°C to

150°C

2 Applications

? HEV/EV PTC heaters

? Traction inverters

? Residential EV chargers

? Motor drives

? HVAC compressors

3 Description

The UCC57102Z-Q1 is a single channel, highperformance

low-side IGBT/SiC gate driver for

high power automotive applications such as PTC

heaters, traction inverter active discharge circuit,

and other auxiliary subsystems. It offers protection

features including Under-voltage-lock-out (UVLO),

Desaturation protection (DESAT), FAULT report, and

thermal shutdown protection. The UCC57102Z-Q1

has a typical peak drive strength of 3A and it can

handle –5V on its inputs, which improves robustness

in systems with moderate ground bouncing. The

inputs are independent of supply voltage and

can be connected to most controller outputs for

maximum control flexibility. The wide voltage range

of the bias supply provided in the UCC57102Z-Q1

accommodates bipolar voltage. An accurate 5V output

LDO is also available with the UCC57102Z-Q1 .