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UPA801

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA801T

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA801T

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

TheμPA801Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA801TC

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA801TC-T1

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION TheμPA801TChasbuilt-inlow-voltagetwotransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?Lownoise:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain:|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Flat-lead

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA801TF

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION TheUPA801TFcontainstwoNE856NPNhighfrequencysiliconbipolarchips.NECsnewlowprofileTFpackageisidealforallportablewirelessapplicatonswherereducingcomponentheightisaprimeconsideration.Eachtransistorchipisindependentlymountedandeasilyconfiguredfortw

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA801T-T1

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

TheμPA801Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoiseNF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain|S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA ?AMiniMoldPackageAdopted

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA801T

NONLINEAR MODEL

CEL

California Eastern Labs

UPA801T

NPN SILICON HIGH FREQUENCY

CEL

California Eastern Labs

UPA801T

isc Silicon NPN RF Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    UPA801

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

供應商型號品牌批號封裝庫存備注價格
NEC
24+
SOT-363
4897
絕對原裝!現(xiàn)貨熱賣!
 詢價
NEC
17+
SOT-363
6200
100%原裝正品現(xiàn)貨
 詢價
NEC
16+
SOT-363
10000
進口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
NEC
23+
SOT-363
7750
全新原裝優(yōu)勢
 詢價
NEC
2020+
SOT363
130610
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
NEC
24+
SOT-363/SOT-323-6
9200
新進庫存/原裝
 詢價
CEL
24+
原廠原封
1000
原裝正品
 詢價
NEC
24+
SOT-363
5000
只做原裝公司現(xiàn)貨
 詢價
NEC
2020+
SOT-363
350000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
NEC
1742+
SOT363
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
 詢價
更多UPA801供應商 更新時間2025-4-25 15:52:00

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