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UPA811T-T1

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD

TheμPA811Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V,IC=3mA ?HighGain |S21e|2=6.5dBTYP.@f=2GHz,VCE=1V,IC=3mA ?ASmallMiniMold

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA811T-T1

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

TheμPA811Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.9dBTYP.@f=2GHz,VCE=1V,IC=3mA ?HighGain |S21e|2=6.5dBTYP.@f=2GHz,VCE=1V,IC=3mA ?ASmallMiniMold

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA812

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

TheμPA812Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain |S21e|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA ?ASmallMiniM

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA812T

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

TheμPA812Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain |S21e|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA ?ASmallMiniM

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA812T

SILICON TRANSISTOR

HIGH-FREQUENCYLOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2′2SC4227)SMALLMINIMOLD FEATURES ?LowNoise NF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain |S21e|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA ?ASmallMiniMoldPackageAdopted

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA812T-T1

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

TheμPA812Thasbuilt-in2low-voltagetransistorswhicharedesignedtoamplifylownoiseintheVHFbandtotheUHFband. FEATURES ?LowNoise NF=1.4dBTYP.@f=1GHz,VCE=3V,IC=7mA ?HighGain |S21e|2=12dBTYP.@f=1GHz,VCE=3V,IC=7mA ?ASmallMiniM

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA813

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2×2SC4570)SMALLMINIMOLD μPA813Thasbuilt-in2transistorswhichweredevelopedforUHF. FEATURES ?HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) ?SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA813T

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2×2SC4570)SMALLMINIMOLD μPA813Thasbuilt-in2transistorswhichweredevelopedforUHF. FEATURES ?HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) ?SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPA813T

SILICON TRANSISTOR

NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2′2SC4570)SMALLMINIMOLD FEATURES ?HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) ?SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f=1MHz) ?ASurfaceMountingPackageAdopted ?Built-in2Transisto

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA813T-T1

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPNSILICONEPITAXIALTRANSISTOR(WITHBUILT-IN2×2SC4570)SMALLMINIMOLD μPA813Thasbuilt-in2transistorswhichweredevelopedforUHF. FEATURES ?HighfT fT=5.5GHzTYP.(@VCE=5V,IC=5mA,f=1GHz) ?SmallCollectorCapacitance Cob=0.7pFTYP.(@VCB=5V,IE=0,f

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細參數

  • 型號:

    UPA81

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

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更多UPA81供應商 更新時間2025-4-5 11:02:00