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UPA835

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION TheμPA835TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES ?Lownoise Q1:NF=1.5dBTYP.@f=2GHz,VCE=3V,IC=3mA Q2:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain Q

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA835TC

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION TheμPA835TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES ?Lownoise Q1:NF=1.5dBTYP.@f=2GHz,VCE=3V,IC=3mA Q2:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain Q

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA835TC-T1

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION TheμPA835TChasbuilt-intwodifferenttransistors(Q1andQ2)forlownoiseamplificationintheVHFbandtoUHFband. FEATURES ?Lownoise Q1:NF=1.5dBTYP.@f=2GHz,VCE=3V,IC=3mA Q2:NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7mA ?Highgain Q

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA835TF

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION TheUPA835TFhastwodifferentbuilt-intransistorsforlowcostamplifierandoscillatorapplicationsintheVHF/UHFband.Lownoisefigures,highgain,highcurrentcapability,andmediumoutputgivethisdevicehighdynamicrangeandexcellentlinearityfortwo-stageamplifiers.Th

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA835TF

Silicon Transistor

NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA835TF-T1

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION TheUPA835TFhastwodifferentbuilt-intransistorsforlowcostamplifierandoscillatorapplicationsintheVHF/UHFband.Lownoisefigures,highgain,highcurrentcapability,andmediumoutputgivethisdevicehighdynamicrangeandexcellentlinearityfortwo-stageamplifiers.Th

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC835

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Inputoffsetvoltage±3mVMAX. ?Slewrate5.5V/μsTYP. ?Unitygainfrequency2.8MHzTYP. ?LowpowerICC≤2.2mAMAX. (Reducescircuitcurrentswhilemaintainingrelativelyhighslewrateandbandwidth) ?Highstabilityissecuredtocapacitiveloads (4000pF,AV=+1) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPS835L

SCHOTTKYBARRIERRECTIFIER8AMP35VOLT

SURFACEMOUNT POWERMITE?3SurfaceMountPowerPackage Features ?LowProfile–Maximumheightof1.1mm ?FootprintAreaof16.51mm ?LowVFProvidesHigherEfficiency ?Suppliedin16mmTapeandReel–6000units/reel ?LowThermalResistancewithDirectThermalPathofDieonExposedCa

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UPS835L

SCHOTTKYBARRIERRECTIFIER8AMP35VOLT

MicrosemiMicrosemi Corporation

美高森美美高森美公司

USD835

POWERSCHOTTKYRECTIFIERS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    UPA835

  • 制造商：

    NEC

  • 制造商全稱(chēng)：

    NEC

  • 功能描述：

    NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
16+
SOT-363
10000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
 詢(xún)價(jià)
NEC
24+
SOT363
11181
詢(xún)價(jià)
NEC
23+
SOT-363
7750
全新原裝優(yōu)勢(shì)
 詢(xún)價(jià)
NEC
17+
SOT-363
6200
100%原裝正品現(xiàn)貨
 詢(xún)價(jià)
NEC
2020+
SOT-363
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
 詢(xún)價(jià)
NEC
1742+
SOT363
98215
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品!
 詢(xún)價(jià)
NEC
23+
NA
19854
專(zhuān)業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理QQ1304306553
 詢(xún)價(jià)
NEC
22+23+
SOT363
12923
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢(xún)價(jià)
NEC
22+
SOT363
30352
原裝正品現(xiàn)貨
 詢(xún)價(jià)
NEC
2020+
SOT23
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢(xún)價(jià)
更多UPA835供應(yīng)商 更新時(shí)間2025-2-20 17:38:00

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