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UPD41257

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD41257C-12

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD41257C-15

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD41257C-20

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD41257L-12

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD41257L-15

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPD41257L-20

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

BM-41257MD

104.6mm(4.118)matrixheight5?7squarematrixdisplay

BRIGHTBRIGHT LED ELECTRONICS CORP

步來特電器寧波步來特電器有限公司

BM-41257ND

104.6mm(4.118)matrixheight5?7squarematrixdisplay

BRIGHTBRIGHT LED ELECTRONICS CORP

步來特電器寧波步來特電器有限公司

KM41257A

256KX1BitDynamicRAMwithPage/NibbleMode

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    UPD41257

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    262144 X 1-BIT DYNAMIC NMOS RAM

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
ZIP-16
212
詢價
NEC
23+
DIP-16
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
NEC
3
公司優(yōu)勢庫存 熱賣中!!
詢價
NEC
57
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
NEC
2016+
DIP
6523
只做原裝正品現(xiàn)貨!或訂貨!
詢價
NEC
23+
DIP
28610
詢價
NEC
8921
DIP-24
120
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價
原裝
24+
DIP
2700
全新原裝自家現(xiàn)貨優(yōu)勢!
詢價
NEC
21+
DIP
6000
絕對原裝現(xiàn)貨
詢價
NEC
2023+
DIP
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
更多UPD41257供應(yīng)商 更新時間2025-2-11 16:00:00