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UPG2009TB

NECs L, S-BAND 4W SPDT SWITCH

DESCRIPTION TheμPG2009TBisanL-bandSPDT(SinglePoleDoubleThrow)GaAsFETswitchwhichwasdevelopedfordigitalcellularorcordlesstelephoneapplication.Thedevicecanoperatefrom500MHzto2.5GHz,havingthelowinsertionlossandhighisolationby2.8Vcontrolvoltage. FEATURES

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2009TB

L, S-Band HIGH POWER SPDT SWITCH

DESCRIPTION NECsUPG2009TBisaL,S-bandSPDT(SinglePoleDoubleThrow)GaAsFETswitchfordigitalcellularorcordlesstelephoneapplication.Thedevicecanoperatefrom500MHzto2.5GHz,withlowinsertionlossandhighisolation. FEATURES ?LOWINSERTIONLOSS: 0.25dBTYP.@Vcont1

CEL

California Eastern Labs

UPG2009TB

GaAs INTEGRATED CIRCUIT

FEATURES ?Lowinsertionloss:LINS=0.25dBTYP.@Vcont1/2=2.8V/0V,f=1.0GHz LINS=0.30dBTYP.@Vcont1/2=2.8V/0V,f=2.0GHz ?Highisolation:ISL=28dBTYP.@Vcont1/2=2.8V/0V,f=2.0GHz ?Highpower:Pin(0.1dB)=34dBmTYP.@Vcont1/2=2.8V/0V,f=1.0GHz

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPG2009TB

L-BAND HIGH POWER SPDT SWITCH

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2009TB-E3

NECs L, S-BAND 4W SPDT SWITCH

DESCRIPTION TheμPG2009TBisanL-bandSPDT(SinglePoleDoubleThrow)GaAsFETswitchwhichwasdevelopedfordigitalcellularorcordlesstelephoneapplication.Thedevicecanoperatefrom500MHzto2.5GHz,havingthelowinsertionlossandhighisolationby2.8Vcontrolvoltage. FEATURES

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2009TB-E3

GaAs INTEGRATED CIRCUIT

FEATURES ?Lowinsertionloss:LINS=0.25dBTYP.@Vcont1/2=2.8V/0V,f=1.0GHz LINS=0.30dBTYP.@Vcont1/2=2.8V/0V,f=2.0GHz ?Highisolation:ISL=28dBTYP.@Vcont1/2=2.8V/0V,f=2.0GHz ?Highpower:Pin(0.1dB)=34dBmTYP.@Vcont1/2=2.8V/0V,f=1.0GHz

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPG2009TB-E3-A

L, S-Band HIGH POWER SPDT SWITCH

DESCRIPTION NECsUPG2009TBisaL,S-bandSPDT(SinglePoleDoubleThrow)GaAsFETswitchfordigitalcellularorcordlesstelephoneapplication.Thedevicecanoperatefrom500MHzto2.5GHz,withlowinsertionlossandhighisolation. FEATURES ?LOWINSERTIONLOSS: 0.25dBTYP.@Vcont1

CEL

California Eastern Labs

UPG2009TB_09

L-BAND HIGH POWER SPDT SWITCH

CEL

California Eastern Labs

UPG2009TB_1

L-BAND HIGH POWER SPDT SWITCH

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPG2009TB-E3

L-BAND HIGH POWER SPDT SWITCH

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    UPG2009TB

  • 功能描述：

    RF 開關(guān) IC L S Band SPDT Switch

  • RoHS：

    否

  • 制造商：

    M/A-COM Technology Solutions

  • 開關(guān)數(shù)量：

    Single

  • 開關(guān)配置：

    SPDT

  • 介入損耗：

    0.6 dB

  • 截止隔離（典型值）：

    43 dB

  • 最大工作溫度：

    + 85 C

  • 最小工作溫度：

    - 40 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    PQFN-16

  • 封裝：

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
23+
SC70-6
24000
全新原裝正品
 詢價(jià)
原廠正品
23+
SOT363
5000
原裝正品,假一罰十
 詢價(jià)
RENESAS
23+
SOT-363
63000
原裝正品現(xiàn)貨
 詢價(jià)
NEC
24+
SOT363
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
TOSHIBA/東芝
2022+
500
全新原裝 貨期兩周
 詢價(jià)
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
NEC
24+
SOT-363
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
 詢價(jià)
NEC
23+
SOT363
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
NEC
SOT363
20
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
NEC
23+
SOT363
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
更多UPG2009TB供應(yīng)商 更新時(shí)間2025-4-27 16:37:00

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