零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
High Current Density Surface Mount TMBS? (Trench MOS Barrier Schottky) Rectifier FEATURES ?Verylowprofile-typicalheightof1.1mm ?Idealforautomatedplacement ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C ?Materialcategorization:fordefi | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES ?Verylowprofile-typicalheightof1.1mm ?Idealforautomatedplacement ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C ?Materialcategorizat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES ?Verylowprofile-typicalheightof1.1mm ?Idealforautomatedplacement ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C ?Materialcategorizat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Current Density Surface Mount TMBS? (Trench MOS Barrier Schottky) Rectifier FEATURES ?Verylowprofile-typicalheightof1.1mm ?Idealforautomatedplacement ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C ?Materialcategorization:fordefi | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES ?Verylowprofile-typicalheightof1.1mm ?Idealforautomatedplacement ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C ?Materialcategorizat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES ?Verylowprofile-typicalheightof1.1mm ?Idealforautomatedplacement ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C ?Materialcategorizat | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier FEATURES ?Verylowprofile-typicalheightof1.1mm ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C ?AEC-Q101qualifiedavailable? -Automotiveorderingcode;baseP/ | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier FEATURES ?Verylowprofile-typicalheightof1.1mm ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C ?AEC-Q101qualifiedavailable? -Automotiveorderingcode;baseP/ | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.50 V at IF = 5 A ?Verylowprofile-typicalheightof1.1mm ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C ?AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/NHM3 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.50 V at IF = 5 A ?Verylowprofile-typicalheightof1.1mm ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C ?AEC-Q101qualifiedavailable -Automotiveorderingcode;baseP/NHM3 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Ge-PNP
- 性質(zhì):
低頻或音頻放大 (LF)_開關(guān)管 (SW)
- 封裝形式:
直插封裝
- 極限工作電壓:
10V
- 最大電流允許值:
0.03A
- 最大工作頻率:
<1MHZ或未知
- 引腳數(shù):
3
- 可代換的型號:
3AX54C,
- 最大耗散功率:
0.2W
- 放大倍數(shù):
β=20
- 圖片代號:
D-161
- vtest:
10
- htest:
999900
- atest:
0.03
- wtest:
0.2
產(chǎn)品屬性
- 產(chǎn)品編號:
V10
- 制造商:
KEMET
- 類別:
電容器 > 配件
- 包裝:
散裝
- 配件類型:
安裝夾
- 配套使用/相關(guān)產(chǎn)品:
圓形罐狀
- 器件尺寸:
2.559" 直徑(65.0mm)
- 描述:
CAPACITOR HARDWARE, CLIP, ZINC S
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
24+ |
1990 |
詢價 | |||||
NSC |
23+ |
SO-8 |
9823 |
詢價 | |||
10+ |
QFN |
6000 |
絕對原裝自己現(xiàn)貨 |
詢價 | |||
VISHAY |
19+ |
TO-277A(SMPC) |
200000 |
詢價 | |||
Infineon(英飛凌) |
2447 |
E-EUPEC-0 |
315000 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
VISHAY/威世 |
21+ |
TO-277A-3 |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
IDT |
2138+ |
QFP |
8960 |
專營BGA,QFP原裝現(xiàn)貨,假一賠十 |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
45000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | |||
LITTELFUSEINC |
22+ |
N/A |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
ICS |
1950+ |
TQFP64 |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 |