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VB30120SG-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature2

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB30120SG-E3SLASH8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

High-VoltageTrenchMOSBarrierSchottkyRectifier FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature2

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB30150C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A ? FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB30150C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s, perJESD22-B106(forTO-220AB,ITO-220ABa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB30150C-E3/4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A ? FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB30150C-E3/8W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A ? FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB30150C-E3SLASH4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A ? FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB30150C-E3SLASH8W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

UltraLowVF=0.56VatIF=5A ? FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB30150C-M3

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VB30150C-M3_V01

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    VB30

  • 功能描述：

    肖特基二極管與整流器 30 Amp 100 Volt Dual TrenchMOS

  • RoHS：

    否

  • 制造商：

    Skyworks Solutions, Inc.

  • 產(chǎn)品：

    Schottky Diodes

  • 峰值反向電壓：

    2 V

  • 正向連續(xù)電流：

    50 mA

  • 配置：

    Crossover Quad

  • 正向電壓下降：

    370 mV

  • 最大功率耗散：

    75 mW

  • 工作溫度范圍：

    - 65 C to + 150 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    SOT-143

  • 封裝：

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Vishay/GeneralSemiconduc
24+
TO-263
7500
詢(xún)價(jià)
VISHAY
23+
TO-263AB
6680
全新原裝優(yōu)勢(shì)
 詢(xún)價(jià)
VISHAY
17+
TO263
6200
100%原裝正品現(xiàn)貨
 詢(xún)價(jià)
ANY
新
12
全新原裝 貨期兩周
 詢(xún)價(jià)
VISHAY
25+23+
TO-263
16601
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢(xún)價(jià)
VISHAY
18+
TO-263
85600
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
 詢(xún)價(jià)
VISHAY/威世
22+
TO-263
163010
原裝正品現(xiàn)貨,可開(kāi)13個(gè)點(diǎn)稅
 詢(xún)價(jià)
VISHAY/威世
1926+
TO-263
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢(xún)價(jià)
24+
TO-263
20000
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅！！
 詢(xún)價(jià)
VISHAY/威世
20+
D2PAK
69052
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢(xún)價(jià)
更多VB30供應(yīng)商 更新時(shí)間2025-3-31 14:00:00

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