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VB30100S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

UltraLowVF=0.39VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte

VishayVishay Siliconix

威世科技威世科技半導體

VB30100S

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VB30100S

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VB30100S

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VB30100S

High-Voltage Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導體

VB30100S-E3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106

VishayVishay Siliconix

威世科技威世科技半導體

VB30100S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

UltraLowVF=0.39VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte

VishayVishay Siliconix

威世科技威世科技半導體

VB30100S-E3/8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

UltraLowVF=0.39VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte

VishayVishay Siliconix

威世科技威世科技半導體

VB30100S-E3SLASH4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

UltraLowVF=0.39VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte

VishayVishay Siliconix

威世科技威世科技半導體

VB30100S-E3SLASH8W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

UltraLowVF=0.39VatIF=5A FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Lowthermalresistance ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathte

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    VB30100S

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

供應商型號品牌批號封裝庫存備注價格
VISHAY/威世
24+
TO-263
501511
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
VISHAY
23+
TO-263
8600
全新原裝現(xiàn)貨
 詢價
VISHAY/威世
1926+
TO-263
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
DIODES/美臺
23+
ITO-220A
69820
終端可以免費供樣,支持BOM配單!
 詢價
VISHAY/威世
22+
TO-263
6000
十年配單,只做原裝
 詢價
VISHAY/威世
23+
TO-263
6000
原裝正品，支持實單
 詢價
Vishay(威世)
22+
NA
6500
原廠原裝現(xiàn)貨
 詢價
Vishay(威世)
23+
N/A
11800
詢價
VISHAY/威世
22+
TO-263
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
VISHAY
25+
TO-263
12300
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
更多VB30100S供應商 更新時間2025-4-26 17:06:00

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