首頁(yè)>VBT1545CBP-E3_V01>規(guī)格書(shū)詳情
VBT1545CBP-E3_V01中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
VBT1545CBP-E3_V01 |
| 功能描述 | Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection |
| 文件大小 |
102.51 Kbytes |
| 頁(yè)面數(shù)量 |
4 頁(yè) |
| 生產(chǎn)廠商 | Vishay Siliconix |
| 企業(yè)簡(jiǎn)稱 |
Vishay【威世科技】 |
| 中文名稱 | 威世科技半導(dǎo)體官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-2-6 16:40:00 |
VBT1545CBP-E3_V01規(guī)格書(shū)詳情
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
? TJ 200 °C max. in solar bypass mode application
? Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: D2PAK (TO-263AB)?
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102?
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
