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BD647

NPNSILICONDARLINGTONTRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD647

NPNSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

POINN

Power Innovations Ltd

BD647

SiliconNPNPowerTransistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications

SAVANTIC

Savantic, Inc.

BD647

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647

COMSET

Comset Semiconductor

BD647

iscSiliconNPNDarlingtonPowerTransistor

*Collector-EmitterBreakdownVoltage-:V(BR)CEO=80V(Min) *HighDCCurrentGain:hFE=750(Min)@IC=3A *LowSaturationVoltage *ComplementtoTypeBD648

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD647

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●RoHScompliant* ●DesignedforComplementaryUsewithBD646,BD648,BD650andBD652 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

BD647

SILICONDARLINGTONPOWERTRANSISTORS

COMSET

Comset Semiconductor

BD647

SiliconNPNDarlingtonPowerTransistor

Eplbasepowerdarlingtontransistors(62.5W) BD643,BD645,BD647,andBD649aremonolithicNPNSiliconepibasepowerdarlingtontransistorswithdiodeandresistorsinaTO220ABplasticpackage(TOP-66).Thecollectorsofthetwotransistorsareelectricallyconnectedtothemetallicmounting

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD647F

iscSiliconNPNDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BLF647

UHFpowerLDMOStransistor

DESCRIPTION SiliconN-channelenhancementmodelateralD-MOSpush-pulltransistorinaSOT540Apackagewithceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES ?Highpowergain ?Easypowercontrol ?Excellentruggedness ?SourceonundersideeliminatesDCisolators

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號(hào)：

    VH647

  • 制造商：

    L-3 communications

  • 制造商：

    LITTON

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更多VH647供應(yīng)商 更新時(shí)間2025-4-5 16:20:00

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