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VP2106N3中文資料SUTEX數(shù)據(jù)手冊(cè)PDF規(guī)格書

VP2106N3
廠商型號(hào)

VP2106N3

功能描述

P-Channel Enhancement-Mode Vertical DMOS FETs

文件大小

456.67 Kbytes

頁(yè)面數(shù)量

4 頁(yè)

生產(chǎn)廠商 Supertex, Inc
企業(yè)簡(jiǎn)稱

SUTEX

中文名稱

Supertex, Inc官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-31 21:46:00

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VP2106N3規(guī)格書詳情

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Features

? Free from secondary breakdown

? Low power drive requirement

? Ease of paralleling

? Low CISS and fast switching speeds

? Excellent thermal stability

? Integral Source-Drain diode

? High input impedance and high gain

? Complementary N- and P-channel devices

Applications

? Motor controls

? Converters

? Amplifiers

? Switches

? Power supply circuits

? Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

產(chǎn)品屬性

  • 型號(hào):

    VP2106N3

  • 功能描述:

    MOSFET 60V 12Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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13+
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一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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SUPERTEX
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Supertex
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MICROCHIP(美國(guó)微芯)
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