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VSD012N06MS

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

BSC012N06NS

OptiMOSTM5Power-Transistor,60V

Features ?Optimizedforsynchronousrectification ?100avalanchetested ?Superiorthermalresistance ?N-channel ?175°Crated ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 ?Highersolderjointreliabilityduetoenlargedsourceinterconnection

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPT012N06N

OptiMOSTMPower-Transistor,60V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

NVMJD012N06CL

MOSFET-Power,DualN-Channel60V,11.9m,42A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMJD012N06CLTWG

MOSFET-Power,DualN-Channel60V,11.9m,42A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

PRM012N06CT

60VSingleN-ChannelMOSFET

PFC

PFC Device Inc.

PRM012N06D

60VSingleN-ChannelMOSFET

PFC

PFC Device Inc.

PRM012N06E

60VSingleN-ChannelMOSFET

PFC

PFC Device Inc.

VST012N06MS

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

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更多VSD012N06MS供應(yīng)商 更新時(shí)間2025-2-14 13:30:00

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