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VT3080C

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC ?Halogen-freea

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080C

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080C-E3

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080C-E3_V01

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB,

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080CHM3-4W

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC ?Halogen-freea

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080C-M3-4W

Dual Trench MOS Barrier Schottky Rectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?Solderbathtemperature275°Cmax.10s,perJESD22-B106 ?AEC-Q101qualified ?ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC ?Halogen-freea

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080C_12

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080C_15

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080C_15

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

VT3080C-E3

Dual Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    VT3080C

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Dual Trench MOS Barrier Schottky Rectifier

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY/威世
23+
TO220
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
VISHAY
1735+
TO220
6528
科恒偉業(yè)!只做原裝正品!假一賠十!
 詢價
VISHAY
1809+
TO-220
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
VIS
23+
TO-220AB
10000
公司只做原裝正品
 詢價
Vishay Semiconductor Diodes Di
22+
TO220AB
9000
原廠渠道,現(xiàn)貨配單
 詢價
VIS
23+
TO-220AB
6000
原裝正品，支持實單
 詢價
Vishay
2023+環(huán)?，F(xiàn)貨
TO-220AB
5050
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價
VIS
22+
TO-220AB
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價
Vishay Semiconductor Diodes Di
23+
TO220AB
8000
只做原裝現(xiàn)貨
 詢價
24+
N/A
82000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
更多VT3080C供應(yīng)商 更新時間2025-2-13 16:44:00

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