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55N10

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

CED55N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,55A,RDS(ON)=16mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED55N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,55A,RDS(ON)=16mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU55N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,55A,RDS(ON)=16mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU55N10

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU55N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,55A,RDS(ON)=16mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FQA55N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=61A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=26mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQA55N10

100VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQAF55N10

100VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB55N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.026Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
23+
TO-247
3000
全新原裝
 詢價
ST
21+
TO-3P
23480
詢價
WINBOND
22+23+
QFP
21800
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
WINBOND
20+
QFP
11520
特價全新原裝公司現(xiàn)貨
 詢價
WINBOND
QFP
22+
6000
十年配單,只做原裝
 詢價
-
23+
NA
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
WINBOND
23+
QFP
6000
原裝正品，支持實單
 詢價
WINBOND
22+
QFP
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價
ST/意法
23+
TO-3P
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法
22+
TO-3P
50000
只做原裝假一罰十,歡迎咨詢
 詢價
更多W55N10供應(yīng)商 更新時間2025-3-16 14:02:00

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