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1N60

SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors

FEATURES ?Hermeticallysealed ?Breakdownvoltagerange6.8-200volts ?Glasspassivatedjunction ?Excellentclampingcapability ?Lowzenerimpedance ?100surgetested ?-55°Cto+150°C ?Bi-directional MAXIMUMRATING ?PeakPulsePower(Ppk):15000Watts(10x1000μs)@25°C(seedi

Littelfuselittelfuse

力特力特公司

1N60

GOLDBONDEDGERMANIUMDIODE

GermaniumGlassDiode Features ?GermaniumGlassDiode ?RoHSCompliance

ETCList of Unclassifed Manufacturers

未分類制造商

1N60

JEDECDO-7PACKAGE

JEDECDO-7PACKAGE

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

1N60

SchottkyBarrierDiode

Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

1N60

GERMANIUMDIODES

Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione

DAESAN

Daesan Electronics Corp.

1N60

SMALLSIGNALSCHOTTKYDIODE

VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

1N60

1.2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow

UTCUnisonic Technologies

友順友順科技股份有限公司

1N60

SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS

Features: *HighReliability *LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching

WEITRON

Weitron Technology

1N60

600VN-ChannelMOSFET

Features ?HighReliability ?LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber ?MoistureSensitivity:Level1perJ-STD-020C MaximumRatings ?Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

1N60

SchottkyBarrierRectifier

Features ?HighReliability ?LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber ?MoistureSensitivity:Level1perJ-STD-020C MaximumRatings ?Storage&OperatingJunctionTemperature:-65℃to+125℃

TGS

Tiger Electronic Co.,Ltd

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
WG
25+
TO-220F/251/252
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
 詢價(jià)
CETC
23+
標(biāo)準(zhǔn)封裝
1050
原廠直銷直銷IGBT模塊 可控硅模塊 sic碳化硅模塊
 詢價(jià)
WG
23+
TO220F
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
 詢價(jià)
24+
N/A
56000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
WG
2012
TO-220F
435
原裝正品現(xiàn)貨
 詢價(jià)
更多WGF1N60供應(yīng)商 更新時(shí)間2025-3-20 15:58:00

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