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20N65

20A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC20N65isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCUnisonic Technologies

友順友順科技股份有限公司

20N65

20AN-ChannelPowerMOSFET

Features ●RDS(ON)=0.35Ω ●Ultralowgatecharge(Typical150nC) ●Lowreversetransfercapacitance(CRSS=typical36pF) ●Fastswitchingcapability ●Avalancheenergyspecified ●Improveddv/dtcapability,highruggedness Application ●Powerfactorcorrection（PFC） ●Switchedm

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

20N65A

20A650VN-channelenhancementmodefieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

20N65Y

20Amps,650VoltsN-CHANNELMOSFET

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重慶平偉實(shí)業(yè)重慶平偉實(shí)業(yè)股份有限公司

AM20N65

MOSFET650V,20AN-CHANNEL

FEATURE ?ProprietaryNewPlanarTechnology ?RDS(ON),typ.typ.=0.38?@VGS=10V ?LowGateChargeMinimizeSwitchingLoss ?FastRecoveryBodyDiode DESCRIPTION TheAM20N65isavailableinTO220andTO220F Packages. APPLICATIONS ?Adaptor ?TVMainPower ?SMPSPowerSupply ?LCDPanel

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

CEB20N65S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB20N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB20N65SF

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. Fastreverserecoverytime. Drivecircuitscanbesimple.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CECS20N65LN

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,19A,RDS(ON)=180mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CECS20N65SA

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,19A,RDS(ON)=180mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
24+
N/A
62000
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
WG
25+
TO-220F/251/252
188600
全新原廠原裝正品現(xiàn)貨 歡迎咨詢
 詢價(jià)
WG
23+
TO220F
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價(jià)
CETC
23+
標(biāo)準(zhǔn)封裝
1050
原廠直銷直銷IGBT模塊 可控硅模塊 sic碳化硅模塊
 詢價(jià)
WG
2012
TO-220F
435
原裝正品現(xiàn)貨
 詢價(jià)
更多WGF20N65SE供應(yīng)商 更新時(shí)間2025-3-22 11:06:00

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