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WS57C51C-45CMB中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

WS57C51C-45CMB
廠商型號(hào)

WS57C51C-45CMB

功能描述

MILITARY HIGH SPEED 16K x 8 CMOS PROM/RPROM

文件大小

19.41 Kbytes

頁(yè)面數(shù)量

2 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱(chēng)

STMICROELECTRONICS意法半導(dǎo)體

中文名稱(chēng)

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-22 22:30:00

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WS57C51C-45CMB規(guī)格書(shū)詳情

GENERAL DESCRIPTION

The WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25 of the power required by its Bipolar counterparts. A further advantage of the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the entire memory array to be tested for switching characteristics and functionality after assembly. Unlike devices which cannot be erased, every WS5751C in a windowed package is 100 tested with worst case test patterns both before and after assembly.

KEY FEATURES

? Ultra-Fast Access Time

— 45 ns

? Low Power Consumption

? Fast Programming

? Pin Compatible with Am27S51 and N82HS1281

? Immune to Latch-Up

— Up to 200 mA

? ESD Protection Exceeds 2000 V

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2020+
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80000
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28PDIP窄
90000
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WSI
QQ咨詢(xún)
CDIP
868
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9649
4
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WSI
1995
DIP
14
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WSI
24+
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3000
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特勵(lì)達(dá)E2V
22+
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500000
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107
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1923+
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3000
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WSI
2022
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9885
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