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BC338

SEMICONDUCTORS

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BC338

TRANSISTOR(NPN)

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

BC338

TRANSISTOR(NPN)

FEATURES ?HighCurrent:IC=800mA. ?DCCurrentGain:hFE=100630(VCE=1V,Ic=100mA). ?ForComplementarywithPNPtypeBC327.

FS

First Silicon Co., Ltd

BC338NPN

SILICONPLANAREPITAXIALTRANSISTORS

SILICONPLANAREPITAXIALTRANSISTORS GeneralPurposeTransistorsBestSuitedforuseinDriverandOutputStagesofAudioAmplifier

CDIL

Continental Device India Limited

BC338-XBK

GeneralPurposeSi-EpitaxialPlanarTransistors

GeneralPurposeSi-EpitaxialPlanarTransistors ?Powerdissipation625mW ?PlasticcaseTO-92(10D3) ?Weightapprox.0.18g ?PlasticmaterialhasULclassification94V-0 ?Specialpackagingbulk

Diotec

Diotec Semiconductor

BD338

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS P-N-PepitaxialbasetransistorsinmonolithicDarlingtoncircuitforaudiooutputstagesandgeneralamplifierandswitchingapplications;plasticSOT-82envelopeforclipmounting;canalsobesolderedoradhesivemountedintoahybirdcircuit.N-P-Ncomplem

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BD338

iscSiliconPNPPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BF338

BipolarNPNDeviceinaHermeticallysealedTO39MetalPackage

SEME-LAB

Seme LAB

BUZ338

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rated)

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BUZ338

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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