零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
Class1Bluetoothv2.0Module | etc2List of Unclassifed Manufacturers etc未分類(lèi)制造商etc2未分類(lèi)制造商 | etc2 | ||
PWMPowerUnit(Thedeviceallowscontinuouspowercontrolforlamps,LEDsorinductiveloads.) PWMPowerUnit Thedeviceallowscontinuouspowercontrolforlamps,LEDsorinductiveloads. ?Highsideswitch ?Overtemperaturprotection ?Shortcircuit/overloadprotectionthroughpulsewidthreductionandoverloadshutdown ?Loaddumpprotection ?Undervoltageandovervoltageshutdown | SIEMENSSiemens Semiconductor Group 西門(mén)子德國(guó)西門(mén)子股份公司 | SIEMENS | ||
PWMPowerUnit PWMPowerUnit Thedeviceallowscontinuouspowercontrolforlamps,LEDsorinductiveloads. ●Highsideswitch(Bootstrap) ●Overtemperaturprotection ●Shortcircuit/overloadprotectionthroughpulsewidthreductionandoverloadshutdown ●Loaddumpprotection ●Undervoltageandovervolta | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SmartHigh-SidePowerSwitch | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES TypeVDSSRDS(ON)ID@VGS CEP730G400V1Ω5.5A10V CEB730G400V1Ω5.5A10V CEF730G400V1Ω5.5A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeprod | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 400V,5A,RDS(ON)=1W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES TypeVDSSRDS(ON)ID@VGS CEP730G400V1Ω5.5A10V CEB730G400V1Ω5.5A10V CEF730G400V1Ω5.5A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeprod | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
TELEMECANIQUE |
22+ |
NA |
500000 |
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂 |
詢(xún)價(jià) |
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