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AN610

Usingthe24LC21DualModeSerialEEPROM

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

AN610

Si48XXATDDPROGRAMMINGGUIDE

SILABS

Silicon Laboratories

AOP610

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAOP610usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.ASchottkydiodeinparallelwiththen-channelFETredu

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AOP610L

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAOP610usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.ASchottkydiodeinparallelwiththen-channelFETredu

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AQW610EH

PhotoMOSRELAYS

PhotoMOSRELAYS FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQW610EH

BothNOandNCcontactsincorporatedinacompactDIP8-pinReinforcedinsulation

FEATURES 1.60Vtypecoupleshighcapacity(0.5A)withlowon-resistance(typ.1?). 2.Reinforcedinsulation5,000V Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 3.Aprrox.1/2thespacecomparedwithth

PanasonicPanasonic Semiconductor

松下松下電器

AQW610EHA

PhotoMOSRELAYS

PhotoMOSRELAYS FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQW610EHA

BothNOandNCcontactsincorporatedinacompactDIP8-pinReinforcedinsulation

FEATURES 1.60Vtypecoupleshighcapacity(0.5A)withlowon-resistance(typ.1?). 2.Reinforcedinsulation5,000V Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 3.Aprrox.1/2thespacecomparedwithth

PanasonicPanasonic Semiconductor

松下松下電器

AQW610EHAX

PhotoMOSRELAYS

PhotoMOSRELAYS FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQW610EHAX

BothNOandNCcontactsincorporatedinacompactDIP8-pinReinforcedinsulation

FEATURES 1.60Vtypecoupleshighcapacity(0.5A)withlowon-resistance(typ.1?). 2.Reinforcedinsulation5,000V Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 3.Aprrox.1/2thespacecomparedwithth

PanasonicPanasonic Semiconductor

松下松下電器

詳細參數(shù)

  • 型號：

    Z610

  • 功能描述：

    TVS 二極管 - 瞬態(tài)電壓抑制器 100V 1.5kW

  • RoHS：

    否

  • 制造商：

    Vishay Semiconductors

  • 極性：

    Bidirectional

  • 擊穿電壓：

    58.9 V

  • 鉗位電壓：

    77.4 V

  • 峰值浪涌電流：

    38.8 A

  • 封裝/箱體：

    DO-214AB

  • 最小工作溫度：

    - 55 C

  • 最大工作溫度：

    + 150 C

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Zilog
120
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JOHNSONELECTRIC
23+
11200
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24+
SOP8
440
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GD/兆易創(chuàng)新
24+
NA/
3350
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TDK
24+
7350
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58000
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GD/兆易創(chuàng)新
23+
SOP-4
50000
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ST
23+
SOP-14L
16900
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ST
24+
SOP-14L
200000
原裝進口正口,支持樣品
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ST
25+
SOP-14L
18000
全新原裝
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更多Z610供應(yīng)商 更新時間2025-4-24 16:20:00

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