BSB104N08NP3G

Marking：0308；Package：MG-WDSON-2；OptiMOS?? Power-MOSFET

Features ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Lowprofile(

BSC0302LS

Marking：0302LS；Package：PG-TDSON-8；MOSFET OptiMOSTM 3 Power-Transistor, 120 V

Features ?N-channel,logiclevel ?100avalanchetested ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?150°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Idealforhigh-frequencyswitchingandsynchronousrectification ?Halogen-free

BSC0303LS

Marking：0303LS；Package：PG-TDSON-8；OptiMOSTM 3 Power-Transistor, 120 V

Features ?N-channel,logiclevel ?100avalanchetested ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?150°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Idealforhigh-frequencyswitchingandsynchronousrectification ?Halogen-free

BSC030N03LSG

Marking：030N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET

Features ?FastswitchingMOSFETforSMPS ?OptimizedtechnologyforDC/DCconverters ?QualifiedaccordingtoJEDEC1)fortargetapplications ?N-channel;Logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?Avalanc

BSC030N03MSG

Marking：030N03MS；Package：TDSON-8；OptiMOS?? M-Series Power-MOSFET

Features ?Optimizedfor5Vdriverapplication(Notebook,VGA,POL) ?LowFOMSWforHighFrequencySMPS ?100avalanchetested ?N-channel ?Verylowon-resistanceRDS(on)@VGS=4.5V ?ExcellentgatechargexRDS(on)product(FOM) ?QualifiedaccordingtoJEDEC1)fortargetapplications ?

BSC030N10NS5SC

Marking：030N10SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 100 V

Features ?Dual-sidecooledpackagewithlowestjunction-topthermalresistance ?175°Crated ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?Superiorthermalresistance ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

BSC033N08NS5SC

Marking：033N08SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features ?Dual-sidecooledpackagewithlowestJunction-topthermalresistance ?Optimizedforsynchronousrectificationinserveranddesktop ?100avalanchetested ?Superiorthermalresistance ?N-channel ?175°Crated ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingto

BSC034N10LS5

Marking：034N10LS；Package：PG-TDSON-8；OptiMOSTM 5 Power-Transistor, 100 V

Features ?OptimizedforhighperformanceSMPS,e.g.sync.Rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel,logiclevel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

BSC037N08NS5

Marking：037N08NS；Package：PG-TDSON-8；Superior thermal resistance

Features ?OptimizedforhighperformanceSMPS,e.g.sync.rec. ?100avalanchetested ?Superiorthermalresistance ?N-channel ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

BSD3A031V

Marking：03W；Package：SOD-323；USB Vbus

Features 240Wattspeakpulsepower(tp=8/20μs) Unidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)16A(8/20μs)