首頁 >芯片絲印>03

零件編號(hào)下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

BSD3C031V

Marking：03B；Package：SOD-323；Microprocessor based equipment

Features 480Wattspeakpulsepower(tp=8/20μs) Bidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)20A(8/20μs)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

ESD03V32D-A

Marking：03W；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature 240~408WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneI/Olineorpowerline(Unidirectional) Lowclampingvoltage Workingvoltages:3.3V~36V Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact): 3.3V~15V); IEC61000-4-2(ESD)±15kV(air),±15kV(contact)

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

ESD03V32DS-A

Marking：03W；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 240~408WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneunidirectionalI/Olineorpowerline LowClampingVoltage WorkingVoltages:3.3V~36V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2(ESD)±30k

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

GAN039-650NBB

Marking：039INBBX；Package：SOT8000；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1.Generaldescription TheGAN039-650NBBisa650V,33mΩGalliumNitride(GaN)FETinaCCPAK1212package.It isanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMTH2technology andlow-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformanc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

GAN039-650NBB

Marking：039INBB；Package：CCPAK1212；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1.Generaldescription TheGAN039-650NBBisa650V,33mΩGalliumNitride(GaN)FETinaCCPAK1212package.It isanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMTH2technology andlow-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformanc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

GAN039-650NBBA

Marking：039INBBA；Package：SOT8000；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1.Generaldescription TheGAN039-650NBBAisanAutomotivequalified650V,33mΩGalliumNitride(GaN)FETina CCPAK1212package.Itisanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaN HEMTH2technologyandlow-voltagesiliconMOSFETtechnologies—offeringsuperiorrel

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

GAN039-650NTB

Marking：039INTBX；Package：SOT8005；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

1.Generaldescription TheGAN039-650NTBisa650V,33mΩGalliumNitride(GaN)FETinaCCPAK1212iinverted package.Itisanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMT H2technologyandlow-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityand

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

GAN039-650NTB

Marking：039INTB；Package：CCPAK1212i；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

1.Generaldescription TheGAN039-650NTBisa650V,33mΩGalliumNitride(GaN)FETinaCCPAK1212iinverted package.Itisanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMT H2technologyandlow-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityand

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

GAN039-650NTBA

Marking：039INTBA；Package：SOT8005；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

1.Generaldescription TheGAN039-650NTBAisanAutomotivequalified650V,33mΩGalliumNitride(GaN)FETina CCPAK1212iinvertedpackage.Itisanormally-offdevicethatcombinesNexperia’slatesthighvoltage GaNHEMTH2technologyandlow-voltagesiliconMOSFETtechnologies—offering su

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

GSOT03C

Marking：03C；Package：SOT-23；TVS Diode Array

Features Ultralowleakage:nAlevel Operatingvoltage:3.3V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±20kV Contactdischarge:±20kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)20A(8/20μs) RoHSCompliant

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

替換型號(hào)

晶體管資料

  • 型號(hào)：

    03P05M

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    50HZ－Thy

  • 性質(zhì)：

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    50V

  • 最大電流允許值：

    0.5A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    3

  • 可代換的型號(hào)：

    BT149,TAG59,2N6681,2N6682,2N6683,2N6684,2N6685,

  • 最大耗散功率：

  • 放大倍數(shù)：

  • 圖片代號(hào)：

    A-20

  • vtest：

    50

  • htest：

    999900

  • atest：

    0.5

  • wtest：

    0

詳細(xì)參數(shù)

  • 型號(hào)：

    03

  • 制造商：

    KNIPEX

  • 功能描述：

    COMBINATION PLIERS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FH風(fēng)華
25+
SMD
8650000
詢價(jià)
FUJITSU
24+
con
10000
查現(xiàn)貨到京北通宇商城
 詢價(jià)
0805
63200
詢價(jià)
NA
NA
NA
2885
原裝/現(xiàn)貨
 詢價(jià)
YAGEO
21+
10000
原裝公司現(xiàn)貨
 詢價(jià)
YAGEO
19+
2073
詢價(jià)
UNI-ROYAL
2306+
NA
6680
原裝正品公司現(xiàn)貨,實(shí)單來談
 詢價(jià)
N/A
2013
直插
500
全新原裝 正品現(xiàn)貨
 詢價(jià)
ZX
2022+
7600
原廠原裝,假一罰十
 詢價(jià)
JDSU/AVANEX/SANTEC
2447
DIP
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
更多03供應(yīng)商 更新時(shí)間2025-4-9 15:55:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多